Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
Identifieur interne : 00C007 ( Main/Repository ); précédent : 00C006; suivant : 00C008Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics
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Abstract
Variable temperature photoluminescence (PL) measurement of a thermal-annealed 6 nm GaInNAs/GaAs quantum well (QW) is carried out to understand its low-temperature carrier dynamic characteristics. It is found that the effect of carrier localization, which remained after a thermal anneal, is due possibly to a center characterized by a transition with activation energy of 13.7 meV below the e1 state. This result is deduced from fitting the integrated PL intensity versus the temperature data with a single-activation-energy model. A comparable value of 11 meV was also obtained between the low-energy (main localized state) and high-energy (e1 state) Gaussian functions used to fit the low-temperature PL spectrum. The localization effect in the thermal-annealed GaInNAs/GaAs QW is further confirmed by time-resolved PL measurements at 17 K, which showed emission-energy-dependent PL decay time characteristic for the low-energy regime (below 1.045 eV) and nearly constant decay time of about 0.14 ns at the high-energy regime, which corresponds to the e1-hh1 transition lifetime. The main localization center could form carrier traps that reduce the e1-hh1 PL transition efficiency. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics</title><author><name sortKey="Ng, T K" uniqKey="Ng T">T. K. Ng</name><affiliation><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14></affiliation><affiliation><inist:fA14 i1="02"><s1>Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1></inist:fA14></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Department of Applied Physics, National Chiayi University, 300 University Road, Chiayi City 600, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Applied Physics, National Chiayi University, 300 University Road, Chiayi City 600</wicri:regionArea><wicri:noRegion>Chiayi City 600</wicri:noRegion></affiliation></author><author><name sortKey="Yoon, S F" uniqKey="Yoon S">S. F. Yoon</name><affiliation><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Wang, S Z" uniqKey="Wang S">S. Z. Wang</name><affiliation><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Lin, L H" uniqKey="Lin L">L.-H. Lin</name><affiliation><inist:fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Ochiai, Y" uniqKey="Ochiai Y">Y. Ochiai</name></author><author><name sortKey="Matsusue, T" uniqKey="Matsusue T">T. Matsusue</name></author></titleStmt><publicationStmt><idno type="inist">03-0352524</idno><date when="2003-09-01">2003-09-01</date><idno type="stanalyst">PASCAL 03-0352524 AIP</idno><idno type="RBID">Pascal:03-0352524</idno><idno type="wicri:Area/Main/Corpus">00CC72</idno><idno type="wicri:Area/Main/Repository">00C007</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor quantum wells</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7867D</term><term>7847</term><term>6172C</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Recuit</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Variable temperature photoluminescence (PL) measurement of a thermal-annealed 6 nm GaInNAs/GaAs quantum well (QW) is carried out to understand its low-temperature carrier dynamic characteristics. It is found that the effect of carrier localization, which remained after a thermal anneal, is due possibly to a center characterized by a transition with activation energy of 13.7 meV below the e1 state. This result is deduced from fitting the integrated PL intensity versus the temperature data with a single-activation-energy model. A comparable value of 11 meV was also obtained between the low-energy (main localized state) and high-energy (e1 state) Gaussian functions used to fit the low-temperature PL spectrum. The localization effect in the thermal-annealed GaInNAs/GaAs QW is further confirmed by time-resolved PL measurements at 17 K, which showed emission-energy-dependent PL decay time characteristic for the low-energy regime (below 1.045 eV) and nearly constant decay time of about 0.14 ns at the high-energy regime, which corresponds to the e1-hh1 transition lifetime. The main localization center could form carrier traps that reduce the e1-hh1 PL transition efficiency. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>94</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Photoluminescence characterization of GaInNAs/GaAs quantum well carrier dynamics</s1></fA08><fA11 i1="01" i2="1"><s1>NG (T. K.)</s1></fA11><fA11 i1="02" i2="1"><s1>YOON (S. F.)</s1></fA11><fA11 i1="03" i2="1"><s1>WANG (S. Z.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIN (L.-H.)</s1></fA11><fA11 i1="05" i2="1"><s1>OCHIAI (Y.)</s1></fA11><fA11 i1="06" i2="1"><s1>MATSUSUE (T.)</s1></fA11><fA14 i1="01"><s1>School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University, Nanyang Avenue, Singapore 639798</s1></fA14><fA14 i1="03"><s1>Department of Applied Physics, National Chiayi University, 300 University Road, Chiayi City 600, Taiwan</s1></fA14><fA14 i1="04"><s1>Department of Materials Technology, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba-shi, Chiba 263-8522 Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>3110-3114</s1></fA20><fA21><s1>2003-09-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0352524</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Variable temperature photoluminescence (PL) measurement of a thermal-annealed 6 nm GaInNAs/GaAs quantum well (QW) is carried out to understand its low-temperature carrier dynamic characteristics. It is found that the effect of carrier localization, which remained after a thermal anneal, is due possibly to a center characterized by a transition with activation energy of 13.7 meV below the e1 state. This result is deduced from fitting the integrated PL intensity versus the temperature data with a single-activation-energy model. A comparable value of 11 meV was also obtained between the low-energy (main localized state) and high-energy (e1 state) Gaussian functions used to fit the low-temperature PL spectrum. The localization effect in the thermal-annealed GaInNAs/GaAs QW is further confirmed by time-resolved PL measurements at 17 K, which showed emission-energy-dependent PL decay time characteristic for the low-energy regime (below 1.045 eV) and nearly constant decay time of about 0.14 ns at the high-energy regime, which corresponds to the e1-hh1 transition lifetime. The main localization center could form carrier traps that reduce the e1-hh1 PL transition efficiency. © 2003 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H67D</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A72C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7867D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6172C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Recuit</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Annealing</s0></fC03><fN21><s1>246</s1></fN21><fN47 i1="01" i2="1"><s0>0333M000184</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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